Nanocomposite oxide thin films grown by pulsed energy beam deposition
Identifieur interne : 002951 ( Main/Repository ); précédent : 002950; suivant : 002952Nanocomposite oxide thin films grown by pulsed energy beam deposition
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Abstract
Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Nanocomposite oxide thin films grown by pulsed energy beam deposition</title><author><name sortKey="Nistor, M" uniqKey="Nistor M">M. Nistor</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Lasers, Plasma and Radiation Physics, L22, P.O. Box MG-36</s1><s2>77125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>1 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>77125 Bucharest-Magurele</wicri:noRegion></affiliation></author><author><name sortKey="Petitmangin, A" uniqKey="Petitmangin A">A. Petitmangin</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>INSP, Université Pierre et Marie Curie - Paris 6, Campus Boucicaut, 140 rue de Lourmel</s1><s2>75015 Paris</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author><author><name sortKey="Hebert, C" uniqKey="Hebert C">C. Hebert</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>INSP, Université Pierre et Marie Curie - Paris 6, Campus Boucicaut, 140 rue de Lourmel</s1><s2>75015 Paris</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author><author><name sortKey="Seiler, W" uniqKey="Seiler W">W. Seiler</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>LIM, ENSAM, 151 boulevard de l'Hôpital</s1><s2>75013 Paris</s2><s3>FRA</s3><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0345802</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0345802 INIST</idno><idno type="RBID">Pascal:11-0345802</idno><idno type="wicri:Area/Main/Corpus">002C74</idno><idno type="wicri:Area/Main/Repository">002951</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Composite materials</term><term>Electron beam deposition</term><term>Energy beam deposition</term><term>Film growth</term><term>Indium</term><term>Inorganic compounds</term><term>Nanocomposites</term><term>Nanostructured materials</term><term>Pulsed beam</term><term>Pulsed laser deposition</term><term>Superconducting transitions</term><term>Thin films</term><term>Transition element compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Matériau composite</term><term>Nanomatériau</term><term>Nanocomposite</term><term>Couche mince</term><term>Faisceau pulsé</term><term>Dépôt faisceau énergie</term><term>Croissance film</term><term>Dépôt laser pulsé</term><term>Dépôt faisceau électronique</term><term>Indium</term><term>Transition supraconductrice</term><term>In</term><term>Composé minéral</term><term>Composé de métal de transition</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Matériau composite</term><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>257</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Nanocomposite oxide thin films grown by pulsed energy beam deposition</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2010 Spring Meeting Symposium R: "Laser processing and diagnostics for micro and nano applications". 7-11 June 2010, Strasbourg (France)</s1></fA09><fA11 i1="01" i2="1"><s1>NISTOR (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>PETITMANGIN (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>HEBERT (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>SEILER (W.)</s1></fA11><fA12 i1="01" i2="1"><s1>EASON (Robert W.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>NISTOR (Magdalena)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>PERRIERE (Jacques)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>SOLIS (Javier)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>ZERGIOTI (Ioanna)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>National Institute for Lasers, Plasma and Radiation Physics, L22, P.O. Box MG-36</s1><s2>77125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>INSP, Université Pierre et Marie Curie - Paris 6, Campus Boucicaut, 140 rue de Lourmel</s1><s2>75015 Paris</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>LIM, ENSAM, 151 boulevard de l'Hôpital</s1><s2>75013 Paris</s2><s3>FRA</s3><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Optoelectronics Research Centre, University of Southampton</s1><s2>Southampton SO17 1BJ</s2><s3>GBR</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>National Institute for Lasers, Plasmas and Radiation Pysics, L22, PO Box MG-36</s1><s2>77125 Bucharest-Magurele</s2><s3>ROU</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Institut des NanoSciences de Paris, Université Paris VI, Campus Boucicaut, 140 rue de Lourmel</s1><s2>75015 Paris</s2><s3>FRA</s3><sZ>3 aut.</sZ></fA15><fA15 i1="04"><s1>Instituto de Optica-CSIC, Serrano 121</s1><s2>28006 Madrid</s2><s3>ESP</s3><sZ>4 aut.</sZ></fA15><fA15 i1="05"><s1>National Technical University of Athens, Physics Department, Hroon Polytehneiou 9</s1><s2>Zographou, Athens</s2><s3>GRC</s3><sZ>5 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>European Materials Research Society (E.MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>5337-5340</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000192819490460</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0345802</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Matériau composite</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Composite materials</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Nanocomposite</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Nanocomposites</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Faisceau pulsé</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Pulsed beam</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Haz pulsado</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Dépôt faisceau énergie</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Energy beam deposition</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Croissance film</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Film growth</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Dépôt laser pulsé</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Pulsed laser deposition</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Dépôt faisceau électronique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Electron beam deposition</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Transition supraconductrice</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Superconducting transitions</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>In</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé minéral</s0><s5>62</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>62</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Composé de métal de transition</s0><s5>63</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>63</s5></fC03><fN21><s1>234</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting. Symposium R: "Laser processing and diagnostics for micro and nano applications"</s1><s3>Strasbourg FRA</s3><s4>2010-06-07</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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